| PART |
Description |
Maker |
| 0809LD30 |
Compant High-Insulation Power Relay, Polarized, 10A 30瓦，28V的，1 GHz的LDMOS的场效应
30 Watt / 28V / 1 Ghz LDMOS FET
30 WATT 28V 1 GHz LDMOS FET
30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| MAPLST1900-060CF |
LDMOS RF Line Power FET Transistor 60 W , 1890-1925 MHz, 26V
|
M/A-COM Technology Solutions, Inc.
|
| NE5550979A-T1A-A NE5550979A-A NE5550979A13 NE55509 |
Silicon Power LDMOS FET
|
Renesas Electronics Corporation
|
| NE5520379A |
3.2V Operation Silicon RF Power LDMOS FET
|
NEC
|
| PTVA127002EV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTVA104501EH |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTFA181001GL |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
| PXAC180602MD-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTVA030121EA |
Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 ?450 MHz
|
Cree, Inc
|
| PTFA210701E PTFA210701F |
Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
| MXR9745T1 MXR9745RT1 |
31.5 dBm / 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
31.5 dBm 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| PTF240101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz
|
Infineon Technologies AG
|
